HK1 High-Purity Single-Crystal Silicon Wafers, 2-12 Inch

HK1 High-Purity Single-Crystal Silicon Wafers, 2-12 Inch - Image 2

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HK1 High-Purity Single-Crystal Silicon Wafers, 2-12 Inch

Name: HK1 High-Purity Single-Crystal Silicon Wafers, 2-12 Inch
SKU: HK1
Availability: InStock

Price range: $4.00 through $748.00

Size

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SKU: HK1 Category: Silicon Wafers

High-Purity Single-Crystal Silicon Wafers – 1–12 Inch

Product Description

High-purity single-crystal silicon wafers are available in a wide
range of diameters, thicknesses, conductivity types, crystal
orientations and resistivity grades for semiconductor, thin-film,
spectroscopy, microscopy and materials research applications.

Both CZ (Czochralski) and FZ (Float Zone) single-crystal silicon
wafers are available. Options include P-type boron-doped silicon,
N-type phosphorus-, arsenic- or antimony-doped silicon, as well as
intrinsic FZ silicon.

Standard wafer thicknesses include 525 μm, 625 μm, 725 μm and
750 μm depending on wafer diameter. Custom substrate thicknesses
from approximately 50 μm to 12 mm can also be supplied.

Technical Parameters

Material	High-Purity Single-Crystal Silicon
Wafer Size	1–12 Inch
Surface Finish	Single-Side Polished
Crystal Growth Method	CZ (Czochralski) / FZ (Float Zone)
P-Type	Boron (B) Doped
N-Type	Phosphorus (P), Arsenic (As), Antimony (Sb) Doped
Intrinsic Silicon	Intrinsic FZ Silicon Available
Crystal Orientation	(100) / (110) / (111)
Custom Thickness Range	50 μm – 12 mm

Standard Wafer Thickness

Wafer Diameter	Typical Thickness
Up to 4 Inch	525 μm
6 Inch	625 μm
8 Inch	725 μm
12 Inch	750 μm

Resistivity Options

Grade	Resistivity Range
Low Resistivity	0.0005–1 Ω·cm
Medium Resistivity	1–100 Ω·cm
High Resistivity	1,000–100,000 Ω·cm

Geometry & Surface Quality

TIR	< 3 μm
TTV	< 10 μm
BOW	< 10 μm
Surface Roughness	< 0.5 nm
Particle Count	< 10 particles for size > 0.3 μm

Typical Stock Configuration

Example: 4-inch single-side polished P-type silicon wafer,
(100) crystal orientation, 525 μm thickness and
approximately 1–20 Ω·cm resistivity.
Other stock configurations are available.

Product Features

High-purity single-crystal silicon
CZ and FZ crystal growth options
P-type, N-type and intrinsic FZ silicon available
Low, medium and high resistivity grades
(100), (110) and (111) crystal orientations
Single-side polished surface
Thicknesses from 50 μm to 12 mm available
Low surface roughness and high wafer flatness
Multiple stock specifications available

Applications

PVD thin-film deposition substrates
CVD thin-film deposition substrates
Magnetron sputtering
X-ray diffraction (XRD)
Infrared spectroscopy
Fluorescence spectroscopy
SEM scanning electron microscopy
AFM atomic force microscopy
Ultra-flat laboratory substrates
Molecular beam epitaxy (MBE)
X-ray analysis
Semiconductor and crystal research

Other Silicon Substrate Options

Single-Crystal Silicon (Si) Wafers
Silicon Dioxide (SiO₂) Wafers
Silicon Nitride (SiN) Wafers
Metal-Coated Silicon Wafers, including Au and Cu coatings

Customization

Multiple stock specifications are available. Wafer diameter,
thickness, conductivity type, dopant, crystal orientation and
resistivity can be selected according to customer requirements.

For quotation, please provide the required wafer diameter,
thickness, crystal orientation, conductivity type, dopant and
resistivity range.

Size

1 Inch-High-Purity Si Wafer-DSP, 1 Inch-High-Purity Si Wafer-SSP, 1 Inch-High-Transmission IR Si Wafer-DSP, 1 Inch-IR Si Wafer-DSP, 1 Inch-SiO2 Wafer-300nm, 12 Inch-High-Purity Si Wafer-DSP, 12 Inch-Prime Si Wafer-DSP, 2 Inch-High-Purity Si Wafer-DSP, 2 Inch-High-Purity Si Wafer-SSP, 2 Inch-Prime Si Wafer-SSP, 2 Inch-Sapphire Wafer-DSP, 2 Inch-Sapphire Wafer-SSP, 2 Inch-SiO2 Wafer-280nm, 2 Inch-SiO2 Wafer-300nm, 20X20mm-Si Square-SSP-1000nm SiO2-12 PCS-Custom, 3 Inch-High-Purity Si Wafer-DSP, 3 Inch-High-Purity Si Wafer-SSP, 3 Inch-SiO2 Wafer-300nm, 4 Inch-4H-SiC-Conductive-350um, 4 Inch-4H-SiC-Semi-Insulating-500um, 4 Inch-Al-Coated Si Wafer-100nm, 4 Inch-Au-Coated Si Wafer-100nm, 4 Inch-Au-Coated Si Wafer-50nm, 4 Inch-Cu-Coated Si Wafer-100nm, 4 Inch-High-Purity Si Wafer-DSP, 4 Inch-High-Purity Si Wafer-SSP, 4 Inch-N-Type Si-(100)-300um-0.001-0.005 Ohm-cm-DSP, 4 Inch-P-Type Si-(100)-300um-Below 0.0015 Ohm-cm-SSP, 4 Inch-P-Type Si-(100)-720um-1-50 Ohm-cm-SSP, 4 Inch-Prime Si Wafer-SSP, 4 Inch-Sapphire Wafer-DSP, 4 Inch-Sapphire Wafer-SSP, 4 Inch-Si Wafer-25 PCS/Box-Vacuum Packed, 4 Inch-Si Wafer-DSP-150um, 4 Inch-SiO2 Wafer-280nm, 4 Inch-SiO2 Wafer-300nm, 5 Inch-High-Purity Si Wafer-SSP, 6 Inch-Al-Coated Si Wafer-500nm, 6 Inch-Au-Coated Si Wafer-100nm, 6 Inch-Cu-Coated Si Wafer-500nm, 6 Inch-High-Purity Si Wafer-DSP, 6 Inch-High-Purity Si Wafer-SSP, 6 Inch-P-Type Si-300um-1-10 Ohm-cm-SSP, 6 Inch-Prime Si Wafer-SSP, 6 Inch-SiN Wafer-300nm, 6 Inch-SiO2 Wafer-280nm, 6 Inch-SiO2 Wafer-300nm, 8 Inch-High-Purity Si Wafer-DSP, 8 Inch-High-Purity Si Wafer-SSP, 8 Inch-Prime Si Wafer-SSP, 8 Inch-SiO2 Wafer-300nm, Custom Si Wafer, Custom Si Wafers