High-Purity Single-Crystal Silicon Substrates for SEM, XPS & AFM
Product Description
High-purity single-crystal silicon substrates provide a flat and smooth
polished surface for electron microscopy, atomic force microscopy,
X-ray photoelectron spectroscopy, thin-film deposition and other
analytical applications.
Single-side polished silicon substrates are available in sizes from
1 inch to 12 inches. Both CZ (Czochralski) and FZ (Float Zone)
single-crystal silicon materials are available with multiple
thicknesses, crystal orientations, conductivity types and resistivity
ranges.
For AFM applications, precision-polished silicon substrates are
recommended when very high surface flatness is required. The smooth
silicon surface helps minimize substrate-related interference during
nanoscale surface characterization.
Technical Parameters
| Material | Single-Crystal Silicon |
| Wafer Size | 1–12 Inch |
| Surface Finish | Single-Side Polished |
| Crystal Growth Method | CZ (Czochralski) / FZ (Float Zone) |
| Standard Thickness | 525 μm / 625 μm / 725 μm |
| Custom Thickness | 50 μm – 12 mm |
| P-Type | Boron (B) Doped |
| N-Type | Phosphorus (P), Arsenic (As), Antimony (Sb) Doped |
| Intrinsic Silicon | FZ Intrinsic Silicon Available |
| Crystal Orientation | (100) / (110) / (111) |
| Resistivity Range | Approx. 0.0001 – 100,000 Ω·cm |
Resistivity Options
| Grade | Resistivity |
|---|---|
| Low Resistivity | Approx. 0.0005–1 Ω·cm |
| Medium Resistivity | Approx. 1–100 Ω·cm |
| High Resistivity | Approx. 1,000–100,000 Ω·cm |
Geometry & Surface Quality
| TIR | < 3 μm |
| TTV | < 10 μm |
| BOW | < 10 μm |
| Surface Roughness | < 0.5 nm |
| Particle Count | < 10 particles for size > 0.3 μm |
Silicon Substrates for SEM & AFM
Silicon substrates used for electron microscopy provide a flat,
smooth and mirror-like surface. The wafer manufacturing process
includes cutting, grinding, multi-wire slicing, mechanical polishing,
chemical etching and chemical-mechanical polishing to achieve a highly
finished surface.
During SEM observation, surface flatness and cleanliness can directly
affect the quality of the observed sample. A smooth substrate helps
clearly display microscopic structures and surface details.
AFM measurements place even higher requirements on substrate flatness.
Precision-polished silicon substrates are therefore recommended for
atomic force microscopy applications where nanoscale surface
characterization is required.
Product Features
- High-purity single-crystal silicon substrate
- Mirror-polished surface for microscopy and surface analysis
- CZ and FZ silicon options available
- P-type, N-type and intrinsic FZ silicon available
- Low, medium and high resistivity grades
- (100), (110) and (111) crystal orientations available
- Surface roughness below 0.5 nm
- Multiple wafer diameters and thicknesses available
- Custom specifications available for laboratory applications
Applications
- SEM scanning electron microscopy
- AFM atomic force microscopy
- XPS surface analysis
- XRD material characterization
- PVD thin-film deposition
- CVD thin-film deposition
- Magnetron sputtering
- Infrared spectroscopy
- Fluorescence spectroscopy
- Ultra-flat laboratory substrates
- Molecular beam epitaxy (MBE)
- Semiconductor and crystal materials research
Customization
Multiple stock specifications are available. Silicon wafer diameter,
thickness, resistivity, conductivity type, dopant and crystal
orientation can be selected according to customer requirements.
For quotation, please provide the required wafer size, thickness,
crystal orientation, conductivity type, dopant and resistivity range.


Reviews
There are no reviews yet.