High-Purity Single-Crystal Silicon Wafers
Product Specifications
| Product Name | Single-Side Polished Silicon Wafer / Double-Side Polished Silicon Wafer |
| Growth Method | Czochralski Single Crystal (CZ) |
| Tolerance | ±0.4 mm |
| Doping Type | N-Type (Phosphorus, Arsenic, Antimony); P-Type (Boron) |
| Crystal Orientation | <100>, <111> |
| Resistivity | 0.001–50 Ω·cm, customizable according to customer requirements |
| TIR | <3 µm |
| TTV | <10 µm |
| BOW | <10 µm |
| Surface Roughness | <0.5 nm |
| Particle Count | <10 for particle size >0.3 µm |
Available Wafer Sizes
| Wafer Type | 1 Inch | 2 Inch | 3 Inch | 4 Inch | 5 Inch | 6 Inch | 8 Inch | 12 Inch |
|---|---|---|---|---|---|---|---|---|
| Single-Side Polished Silicon Wafer | 1 Inch | 2 Inch | 3 Inch | 4 Inch | 5 Inch | 6 Inch | 8 Inch | 12 Inch |
| Double-Side Polished Silicon Wafer | — | 2 Inch | 3 Inch | 4 Inch | 5 Inch | 6 Inch | — | — |
| Lapped Silicon Wafer | — | 2 Inch | 3 Inch | 4 Inch | 5 Inch | 6 Inch | — | — |
| Intrinsic FZ High-Resistivity Silicon Wafer | — | 2 Inch | 3 Inch | 4 Inch | 5 Inch | 6 Inch | — | — |
Typical Applications
- Synchrotron radiation sample carriers
- PVD/CVD coating substrates
- Magnetron sputtering growth samples
- XRD analysis
- SEM analysis
- Atomic force microscopy analysis
- Infrared spectroscopy analysis
- Fluorescence spectroscopy analysis
- Molecular beam epitaxy growth substrates
- X-ray crystal analysis
- TFT thin-film transistor substrates
- Nanoimprint substrates
- Two-dimensional material substrates
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