IT1 1-Inch High-Purity SSP Silicon Wafer with Thermal SiO2

Price range: $21.00 through $150.00

1-Inch High-Purity SSP Silicon Wafer with Thermal SiO₂

1-Inch High-Purity SSP Silicon Wafer with Thermal SiO2

Thermal Oxidation

Thermal oxidation forms a silicon dioxide layer on the silicon surface.
The process is performed at elevated temperatures in the presence of
an oxidizing agent and is known as thermal oxidation.

Thermal oxide layers are typically grown in horizontal tube furnaces
at temperatures ranging from 900°C to 1200°C using wet or dry oxidation.

Compared with oxide layers deposited by CVD, thermally grown oxide
layers provide higher uniformity and higher dielectric strength.
They are suitable as insulating dielectric layers and are widely used
in silicon-based devices as doping barriers and surface dielectric layers.

Applications

  1. Etch rate measurement
  2. Metal wire bonding testing
  3. Metal wafer bonding
  4. Electrical insulation layer

Available Wafer Sizes

Wafer Type 1 Inch 2 Inch 3 Inch 4 Inch 5 Inch 6 Inch 8 Inch 12 Inch
Single-Side Polished Silicon Wafer 1 Inch 2 Inch 3 Inch 4 Inch 5 Inch 6 Inch 8 Inch 12 Inch
Double-Side Polished Silicon Wafer 2 Inch 3 Inch 4 Inch 5 Inch 6 Inch
Lapped Silicon Wafer 2 Inch 3 Inch 4 Inch 5 Inch 6 Inch
Intrinsic FZ High-Resistivity Silicon Wafer 2 Inch 3 Inch 4 Inch 5 Inch 6 Inch
Size

1-Inch SiO2 Oxidized Silicon Wafer / 300 NM, 2-Inch SiO2 Oxidized Silicon Wafer / 300 NM, 3-Inch SiO2 Oxidized Silicon Wafer / 300 NM, 4-Inch SiO2 Oxidized Silicon Wafer / 300 NM, 6-Inch SiO2 Oxidized Silicon Wafer / 300 NM, 8-Inch SiO2 Oxidized Silicon Wafer / 300 NM, Other Silicon Wafer Specifications

Reviews

There are no reviews yet.

Be the first to review “IT1 1-Inch High-Purity SSP Silicon Wafer with Thermal SiO2”

Your email address will not be published. Required fields are marked *