SV1 Silicon, SiO2 & SiN Wafers, 1-12 Inch
Price range: $0.00 through $373.00
Silicon, SiO₂ & SiN Wafers – 1–12 Inch
Product Description
High-purity single-crystal silicon wafers are available in a wide
range of diameters, thicknesses, conductivity types, crystal
orientations and resistivity grades for semiconductor, thin-film,
microscopy, spectroscopy and materials research.
Both CZ (Czochralski) and FZ (Float Zone) single-crystal silicon
substrates are available. Options include P-type boron-doped silicon,
N-type phosphorus-, arsenic- or antimony-doped silicon, as well as
intrinsic FZ silicon.
In addition to bare single-crystal silicon wafers, SiO₂-coated
silicon wafers, SiN-coated silicon wafers and metal-coated silicon
substrates are also available according to customer requirements.
Available Wafer Types
| Wafer Type | Description |
|---|---|
| Silicon Wafer | Single-Crystal Silicon (Si) |
| SiO₂ Wafer | Silicon Dioxide on Silicon |
| SiN Wafer | Silicon Nitride on Silicon |
| Metal-Coated Silicon Wafer | Metal coatings such as Au, Cu, etc. |
Technical Parameters
| Wafer Size | 1–12 Inch |
| Surface Finish | Single-Side Polished |
| Crystal Growth Method | CZ (Czochralski) / FZ (Float Zone) |
| Thickness Range | 50 μm – 12 mm |
| P-Type | Boron (B) Doped |
| N-Type | Phosphorus (P), Arsenic (As), Antimony (Sb) Doped |
| Intrinsic Silicon | Intrinsic FZ Silicon Available |
| Crystal Orientation | (100) / (110) / (111) |
| Available Resistivity | Approx. 0.0001 – 100,000 Ω·cm, depending on specification |
Standard Wafer Thickness
| Wafer Diameter | Typical Thickness |
|---|---|
| Up to 4 Inch | 525 μm |
| 6 Inch | 625 μm |
| 8 Inch | 725 μm |
| 12 Inch | 750 μm |
Resistivity Options
| Grade | Resistivity Range |
|---|---|
| Low Resistivity | 0.0005–1 Ω·cm |
| Medium Resistivity | 1–100 Ω·cm |
| High Resistivity | 1,000–100,000 Ω·cm |
Geometry & Surface Quality
| TIR | < 3 μm |
| TTV | < 10 μm |
| BOW | < 10 μm |
| Surface Roughness | < 0.5 nm |
| Particle Count | < 10 particles for size > 0.3 μm |
Typical Stock Example
Example stock specification: 4-inch single-side polished P-type
silicon wafer, (100) crystal orientation, 525 μm thickness and
approximately 1–20 Ω·cm resistivity. Other stock configurations
are available.
Product Features
- Wafer diameters from 1 inch to 12 inches
- CZ and FZ single-crystal silicon available
- P-type, N-type and intrinsic FZ silicon options
- Low-, medium- and high-resistivity grades
- (100), (110) and (111) crystal orientations
- Single-side polished surface
- Custom thicknesses from 50 μm to 12 mm
- Low surface roughness for analytical applications
- Si, SiO₂, SiN and metal-coated substrate options
Applications
- PVD thin-film deposition substrates
- CVD thin-film deposition substrates
- Magnetron sputtering
- X-ray diffraction (XRD)
- Infrared spectroscopy
- Fluorescence spectroscopy
- SEM scanning electron microscopy
- AFM atomic force microscopy
- Ultra-flat laboratory substrates
- Molecular beam epitaxy (MBE)
- X-ray analysis
- Semiconductor and crystal research
Customization
Multiple stock specifications are available. Wafer diameter,
thickness, conductivity type, dopant, crystal orientation,
resistivity and surface coating can be selected according to
customer requirements.
For quotation, please provide the required wafer diameter,
thickness, wafer type, crystal orientation, conductivity type,
dopant, resistivity range and coating requirements.
| Size | 1-Inch-DSP-High-Purity Silicon Wafer, 1-Inch-High-Transmission IR Si Wafer-DSP-25.4mm Dia., 1-Inch-IR Si Wafer-DSP-25.4mm Dia., 1-Inch-SiO2 Wafer-300nm, 1-Inch-SSP-High-Purity Silicon Wafer, 12-Inch-DSP-High-Purity Silicon Wafer, 2-Inch-Double-Side Lapped Si Wafer-Unpolished, 2-Inch-DSP-High-Purity Silicon Wafer, 2-Inch-High-Transmission IR Si Wafer-DSP-50.8mm Dia., 2-Inch-Prime Grade-DSP-Silicon Wafer, 2-Inch-Prime Grade-SSP-Silicon Wafer, 2-Inch-Quartz Wafer-DSP-500um, 2-Inch-SiO2 Wafer-300nm, 2-Inch-SSP-High-Purity Silicon Wafer, 20X20X0.4mm-Si Square-SSP-Fine Polished-Custom, 3-Inch-DSP-High-Purity Silicon Wafer, 3-Inch-Prime Grade-SSP-Silicon Wafer, 3-Inch-SiO2 Wafer-300nm, 3-Inch-SSP-High-Purity Silicon Wafer, 30X30mm-High-Transmission IR Si-Custom, 4-Inch-Ag-Coated Si Wafer-100nm, 4-Inch-Al-Coated Si Wafer-100nm, 4-Inch-Au-Coated Si Wafer-100nm, 4-Inch-Cu-Coated Si Wafer-100nm, 4-Inch-DSP-High-Purity Silicon Wafer, 4-Inch-Prime Grade-SSP-Silicon Wafer, 4-Inch-Pt-Coated Si Wafer-100nm, 4-Inch-Quartz Wafer-DSP-500um, 4-Inch-Quartz Wafer-DSP-500um-Cut 20X20mm-Custom, 4-Inch-Si Wafer-SSP-SEM-P-Type (100), 4-Inch-SiN Wafer-100nm, 4-Inch-SiN Wafer-200nm, 4-Inch-SiN Wafer-300nm, 4-Inch-SiO2 Wafer-300nm, 4-Inch-SSP-High-Purity Silicon Wafer, 5-Inch-Prime Grade-SSP-Silicon Wafer, 5-Inch-SSP-High-Purity Silicon Wafer, 6-Inch-DSP-High-Purity Silicon Wafer, 6-Inch-Prime Grade-SSP-Silicon Wafer, 6-Inch-Prime N-Type Si Wafer-(100)-625um-0.001-0.009 Ohm-cm-SSP, 6-Inch-Quartz Wafer-DSP-500um, 6-Inch-SiO2 Wafer-300nm, 6-Inch-SSP-High-Purity Silicon Wafer, 8-Inch-DSP-High-Purity Silicon Wafer, 8-Inch-Prime Grade-SSP-Silicon Wafer, 8-Inch-SiO2 Wafer-300nm, 8-Inch-SSP-High-Purity Silicon Wafer, Custom Specification |
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