Thermal Oxidized Silicon Wafers – 1–8 Inch, SiO₂ 20 nm–4 μm
Product Description
Thermal oxidized silicon wafers consist of single-crystal silicon
substrates with a thermally grown silicon dioxide (SiO₂) layer.
They are widely used as substrates for thin-film deposition,
semiconductor research, surface analysis and materials science.
Wafer sizes from 1 inch to 8 inches are available, with thermal oxide
thicknesses ranging from approximately 20 nm to 4 μm. Different
silicon substrate types, crystal orientations, conductivity types,
dopants and resistivity ranges can be supplied according to research
requirements.
CZ (Czochralski) and FZ (Float Zone) single-crystal silicon substrates
are available. P-type, N-type and intrinsic silicon options can be
selected for different semiconductor, optical and analytical
applications.
Oxide Layer Specifications
| Oxide Material | Thermal Silicon Dioxide (SiO₂) |
| Oxide Thickness | 20 nm – 4 μm |
| Wafer Size | 1–8 Inch |
| Custom Specifications | Available on Request |
Silicon Substrate Parameters
| Surface Finish | Single-Side Polished |
| Crystal Growth Method | CZ (Czochralski) / FZ (Float Zone) |
| Standard Substrate Thickness | 525 μm / 625 μm / 725 μm |
| Custom Substrate Thickness | 50 μm – 12 mm |
| P-Type | Boron (B) Doped |
| N-Type | Phosphorus (P), Arsenic (As), Antimony (Sb) Doped |
| Intrinsic Silicon | FZ Intrinsic Silicon Available |
| Crystal Orientation | (100) / (110) / (111) |
| Resistivity | Approx. 0.0001 – 100,000 Ω·cm |
Geometry & Surface Quality
| TIR | < 3 μm |
| TTV | < 10 μm |
| BOW | < 10 μm |
| Surface Roughness | < 0.5 nm |
| Particle Count | < 10 particles for size > 0.3 μm |
Product Features
- Thermally grown SiO₂ layer
- Oxide thickness from 20 nm to 4 μm
- Wafer diameters from 1 inch to 8 inches
- CZ and FZ silicon substrates available
- P-type, N-type and intrinsic silicon options
- (100), (110) and (111) crystal orientations
- Wide resistivity range available
- Low surface roughness and high wafer flatness
- Multiple stock and custom specifications available
Applications
- PVD thin-film deposition substrates
- CVD thin-film deposition substrates
- Magnetron sputtering
- X-ray diffraction (XRD)
- Infrared spectroscopy
- Fluorescence spectroscopy
- SEM sample substrates
- AFM ultra-flat substrates
- Molecular beam epitaxy (MBE) research
- X-ray analysis
- Semiconductor research
- Thin-film and materials science research
Customization
Multiple stock specifications are available. Wafer diameter, silicon
substrate thickness, oxide thickness, conductivity type, dopant,
crystal orientation and resistivity can be selected according to
customer requirements.
For quotation, please provide the required wafer diameter, substrate
thickness, SiO₂ thickness, crystal orientation, conductivity type,
dopant and resistivity range.



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