4-Inch SiO₂ SiC Wafers for Laser Cutting and RFID Research
Product Specifications
| Growth Method |
Czochralski Single Crystal (CZ), Thermal Oxidation |
| Diameter & Tolerance |
100 ± 0.4 mm |
| Doping Type |
N-Type (Phosphorus, Arsenic, Antimony); P-Type (Boron) |
| Crystal Orientation |
<111>, <100> |
| Resistivity |
0.001–50 Ω·cm, customizable according to customer requirements |
| TIR |
<3 µm |
| TTV |
<10 µm |
| BOW |
<10 µm |
| Surface Roughness |
<0.5 nm |
| Particle Count |
<10 for particle size >0.3 µm |
Custom Specifications
| Doping |
N / P; Phosphorus, Arsenic, Antimony, Boron |
| Crystal Orientation |
<111>, <100>, <110> |
| Resistivity |
0.001–20000 Ω·cm |
| STIR |
<1 µm |
| TTV |
<3 µm |
| BOW |
<5 µm |
| Surface Roughness Ra |
<0.5 nm |
| Particle Count |
<10 particles for size >0.3 µm |
Available Wafer Sizes
| Wafer Type |
1 Inch |
2 Inch |
3 Inch |
4 Inch |
5 Inch |
6 Inch |
8 Inch |
12 Inch |
| Single-Side Polished Silicon Wafer |
1 Inch |
2 Inch |
3 Inch |
4 Inch |
5 Inch |
6 Inch |
8 Inch |
12 Inch |
| Double-Side Polished Silicon Wafer |
— |
2 Inch |
3 Inch |
4 Inch |
5 Inch |
6 Inch |
— |
— |
| Lapped Silicon Wafer |
— |
2 Inch |
3 Inch |
4 Inch |
5 Inch |
6 Inch |
— |
— |
| Intrinsic FZ High-Resistivity Silicon Wafer |
— |
2 Inch |
3 Inch |
4 Inch |
5 Inch |
6 Inch |
— |
— |
Typical Applications
- Synchrotron radiation sample carriers
- PVD/CVD coating substrates
- Magnetron sputtering growth samples
- XRD analysis
- SEM analysis
- Atomic force microscopy analysis
- Infrared spectroscopy analysis
- Fluorescence spectroscopy analysis
- Molecular beam epitaxy growth substrates
- X-ray analysis of crystalline semiconductors
Packaging
Available packaging quantities include 1 wafer, 5 wafers,
10 wafers and 25 wafers. Vacuum packaging with ultra-clean
dust-free aluminum foil is available.
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