4-Inch Single-Side Polished Silicon Wafer

Product Specifications
| Product Name | Single-Side Polished Silicon Wafer |
| Growth Method | Czochralski Single Crystal |
| Diameter Tolerance | ±0.4 mm |
| Doping Type | N-Type (Phosphorus, Arsenic, Antimony); P-Type (Boron) |
| Crystal Orientation | <111>, <100> |
| Resistivity | 0.001–50 Ω·cm, customizable according to customer requirements |
| TIR | <3 µm |
| TTV | <10 µm |
| BOW | <10 µm |
| Surface Roughness | <0.5 nm |
| Particle Count | <10 for particle size >0.3 µm |
Typical Applications
- Synchrotron radiation sample carriers
- PVD/CVD coating substrates
- Magnetron sputtering growth samples
- XRD analysis
- SEM analysis
- Atomic force microscopy analysis
- Infrared spectroscopy analysis
- Fluorescence spectroscopy analysis
- Molecular beam epitaxy growth substrates
- X-ray crystal analysis substrates













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