High-Purity Single-Side Polished Silicon Wafers, 1–12 Inch
Product Specifications
| Growth Method | Czochralski Single Crystal (CZ), Thermal Oxidation |
| Diameter & Tolerance | 100 ± 0.4 mm |
| Doping Type | N-Type (Phosphorus, Arsenic, Antimony); P-Type (Boron) |
| Crystal Orientation | <111>, <100> |
| Resistivity | 0.001–50 Ω·cm, customizable according to customer requirements |
| TIR | <3 µm |
| TTV | <10 µm |
| BOW | <10 µm |
| Surface Roughness | <0.5 nm |
| Particle Count | <10 for particle size >0.3 µm |
Custom Specifications
| Doping | N / P; Phosphorus, Arsenic, Antimony, Boron |
| Crystal Orientation | <111>, <100>, <110> |
| Resistivity | 0.001–20000 Ω·cm |
| STIR | <1 µm |
| TTV | <3 µm |
| BOW | <5 µm |
| Surface Roughness Ra | <0.5 nm |
| Particle Count | <10 for particle size >0.3 µm |
Available Wafer Sizes
| Wafer Type | 1 Inch | 2 Inch | 3 Inch | 4 Inch | 5 Inch | 6 Inch | 8 Inch | 12 Inch |
|---|---|---|---|---|---|---|---|---|
| Single-Side Polished Silicon Wafer | 1 Inch | 2 Inch | 3 Inch | 4 Inch | 5 Inch | 6 Inch | 8 Inch | 12 Inch |
| Double-Side Polished Silicon Wafer | — | 2 Inch | 3 Inch | 4 Inch | 5 Inch | 6 Inch | — | — |
| Lapped Silicon Wafer | — | 2 Inch | 3 Inch | 4 Inch | 5 Inch | 6 Inch | — | — |
| Intrinsic FZ High-Resistivity Silicon Wafer | — | 2 Inch | 3 Inch | 4 Inch | 5 Inch | 6 Inch | — | — |
Typical Applications
- Synchrotron radiation sample carriers
- PVD/CVD coating substrates
- Magnetron sputtering growth samples
- XRD analysis
- SEM analysis
- Atomic force microscopy analysis
- Infrared spectroscopy analysis
- Fluorescence spectroscopy analysis
- Molecular beam epitaxy growth substrates
- X-ray analysis of crystalline semiconductors
Packaging
Available packaging quantities: 1 wafer, 5 wafers, 10 wafers
and 25 wafers. Ultra-clean dust-free aluminum foil vacuum packaging
is available.










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